Advancements and Challenges in Photomask Technologies for Semiconductor Lithography: A Comparative Review of Binary, PhaseShift, and EUV Masks

Abstract

This report investigates essential photomask technologies in semiconductor manufacturing and their developments. It outlines the principles and uses of binary photomasks, attenuated phase shift masks, and extreme ultraviolet (EUV) photomasks in lithography systems. With technological advancements, masks have evolved to tackle the demand for smaller feature sizes. Despite these advancements, each mask type has specific applications and constraints. The report also touches on other mask types, including ternary, chromeless phase lithography (CPL), and silicon-containing masks, and anticipates future challenges and directions in photomask technology