This article explores the evolution of Field Effect Transistor (FET) technology, from early Metal-Oxide-Semiconductor FETs to modern Gate-All-Around FETs. It explains FET’s fundamental principles, highlighting its importance in electronics due to high input resistance, low noise, and precise current control. The text traces the progression from planar MOS FETs to three-dimensional FinFETs, which addressed current leakage issues. As semiconductor manufacturing advanced to 3nm processes, new challenges led to GAA FET development, offering improved electrostatic control and further miniaturization. Emerging technologies like Quantum Well FETs and Graphene FETs are mentioned, promising higher performance and broader applications. The article emphasizes FETs’ crucial role in both analog and digital circuits, driving electronic device miniaturization. Looking ahead, it predicts continued breakthroughs in FET technology, stressing the need for innovative structures and materials to create smaller, faster transistors. These developments are expected to impact fields like AI, IoT, and quantum computing, shaping the future of electronics and computing.
